Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O

Abstract:

Article Preview

The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC were examined using metal-insulator-semiconductor (MIS) structures of Pt/La2O3(18nm)/4H-SiC and Pt/Al2O3(10nm)/La2O3(5nm)/4H-SiC. For the Pt/La2O3(18nm)/4H-SiC structure, even though the leakage current density was slightly reduced after the rapid thermal annealing at 500 oC, accumulation capacitance was gradually increased with increasing bias voltage due to a high leakage current. On the other hand, since the leakage current in the accumulation regime was decreased for the Pt/Al2O3/La2O3/4H-SiC MIS structure owing to the capped Al2O3 layer, the capacitance was saturated. But the saturation capacitance was strongly dependent on frequency, indicating a leaky interfacial layer formed between the La2O3 and SiC during the fabrication process of Pt/Al2O3(10nm)/ La2O3(5nm)/ 4H-SiC structure.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1083-1086

Citation:

J. H. Moon et al., "Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O", Materials Science Forum, Vols. 527-529, pp. 1083-1086, 2006

Online since:

October 2006

Export:

Price:

$38.00

[1] L. Lipkin and J. Palmour: IEEE Trans. Electron Devices ED-46 (1999), p.525.

[2] H.R. Lazar, V. Misra, R.S. Johnson and G. Lucovsky: Appl. Phys. Lett. Vol. 79 (2004), p.973.

[3] Y. H. Wu, M. Y. Yang, A. Chin, W. J. Chen and C. M. Kwei: IEEE Electron Dev. Letter. 21 (7) (2000), p.341.

[4] A. Chin, Y.H. Wu, S.B. Chen, C.C. Liao, and W. J. Chen: in Symposium on VLSI Tech. (2000), p.16.

[5] I. Perez et al: IEEE Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits (2000), p.144.

[6] H.J. Na, H.J. Kim, K. Adachi, N. Kiritani, S. Tanimoto, H. Okushi and K. Arai: J. Electron. Mater. Vol. 33, No. 2, (2004), p.89.

[7] J. Jiang, O.O. Awadelkarim, D. -O Lee, P. Roman, and J. Ruzyllo: Solid-State Electron. Vol. 46, p. (1991).

[8] J. H. Kim: Ph. D. Thesis, University of Florida, U. S (2004).

[9] D.K. Schroder: Semiconductor Material and Device Characterization, (Wiley and Sons, New York, 1998).