Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics


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A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the breakdown voltage for both SiC JBDs and SBDs, obtained by using high-k dielectrics. A study regarding the influence of the dielectric permittivity and thickness on the off-state performances of the diodes is included. It is shown that Si3N4 is to be preferred to SiO2 for the dielectric ramp. Termination efficiencies up to 96% are reported.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




M. Brezeanu et al., "Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics", Materials Science Forum, Vols. 527-529, pp. 1087-1090, 2006

Online since:

October 2006




[1] D. Nakamura, I. Gunjishima, S. Yamaguchi, T. Ito, A. Okamoto, H. Kondo, S. Onda and K. Takatori: Nature Vol. 430 (2004), p.1009.


[2] M. Badila, G. Brezeanu and F. Mitu: John Wiley Encyclopedia of Electrical and Electronics Engineering Vol. 18 (1999), p.710.


[3] G. Brezeanu, M. Badila, P. Godignon, J. Millan, F. Udrea, A. Mihaila and G. Amaratunga: Mater. Sci. Forum Vol. 389-393 (2002), p.1301.


[4] S. Saddow and A. Agarwal: Advances in Silicon Carbide: Processing and Application (Artec House Inc, 2004).

[5] J. Robertson: Solid-State Electronics Vol. 49 (2005), p.283.

[6] R. Rusli, C.L. Tan, S.W. Tan, A. Kamta, C.L. Zhu, B.K. Lok, F.K. Lai and C.C. Tin: Investigation of Field Plate Terminated 4H-SiC Schottky Diode Using High k Dielectrics, ICMAT 2005, Mat. Research Society of Singapore.

[7] A. Perez, D. Tournier, J. Montserrat, N. Mestres, F. Sandiumenge and J. Millan: Mater. Sci. Forum Vol. 457-460 (2004), p.845.