Paper Title:
Selectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon Carbide
  Abstract

The selectivity, material removal rate, and the residual subsurface damage of colloidal silica (CS) chemi-mechanical polishing (CMP) of silicon carbide substrates was investigated using atomic force microscopy (AFM) and plan view transmission electron microscopy (TEM). Silica CMP, in most process conditions, was selective. In the damage region surrounding remnant scratches, the vertical material removal rate exceeded the planar material removal rate, which resulted in an enhancement of the scratches over the duration of the polishing process. The material removal rate was low, about 20 nm / hr. In addition, the selectivity leads to a slow removal of residual subsurface damage from mechanical polishing. The silica CMP polished surface exhibits significant subsurface damage observed by plan view TEM even after prolonged polishing of 16 hours.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1095-1098
DOI
10.4028/www.scientific.net/MSF.527-529.1095
Citation
J.R. Grim, M. Skowronski, W.J. Everson, V.D. Heydemann, "Selectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon Carbide", Materials Science Forum, Vols. 527-529, pp. 1095-1098, 2006
Online since
October 2006
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