Via Hole Formation in Silicon Carbide by Laser Micromachining


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A 248 nm (KrF) excimer laser with a repetition rate of 10 Hz, pulse duration of 30 ns and beam energy up to 450 mJ was employed to form vias in 4H-SiC substrates and Lely platelets. SEM micrographs have been used to evaluate etched material quality as well as etch rate. The area surrounding the via-holes is covered by nanoparticles, which are debris from the laser ablation and are removed by chemical cleaning and agitation. The etch-rate exhibits a perfect linear behaviour versus the number of laser pulses showing the possibility of an all-laser via-hole formation. A slight tapering along the via-holes, useful for the subsequent metallization process is also observed. Finally, a defective,15 μm wide, zone is formed nearby the sidewalls.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




K. Zekentes et al., "Via Hole Formation in Silicon Carbide by Laser Micromachining", Materials Science Forum, Vols. 527-529, pp. 1119-1122, 2006

Online since:

October 2006




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