Developments in Hybrid Si – SiC Power Modules

Abstract:

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This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits justifying the increased SiC diode cost, such as EMI reduction, increased efficiency, reduced magnetic filter volume and reduced cooling requirements at higher allowable switching frequencies is investigated.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1141-1147

DOI:

10.4028/www.scientific.net/MSF.527-529.1141

Citation:

G. Skibinski et al., "Developments in Hybrid Si – SiC Power Modules", Materials Science Forum, Vols. 527-529, pp. 1141-1147, 2006

Online since:

October 2006

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Price:

$35.00

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