Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Abstract:

Article Preview

The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1167-1170

DOI:

10.4028/www.scientific.net/MSF.527-529.1167

Citation:

V. Raineri et al., "Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 527-529, pp. 1167-1170, 2006

Online since:

October 2006

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.