Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes


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The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




V. Raineri et al., "Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 527-529, pp. 1167-1170, 2006

Online since:

October 2006




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