Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
V. Raineri et al., "Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 527-529, pp. 1167-1170, 2006