Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices

Abstract:

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Scaling theory is applied in the design of power devices. The scaling law for power devices is presented. A new figure of merit (HFOM) is derived as an invariant of scale transformation, which is a function of avalanche breakdown field and regarded as a measure of the performance of a power device. The optimization of a SiC Schottky barrier diode with the floating junction structure (Super-SBD) has been performed using the HFOM as a measure of the performance. The performance of the optimized Super-SBD surpasses the performance limit of 4H-SiC devices with the conventional structure.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1179-1182

DOI:

10.4028/www.scientific.net/MSF.527-529.1179

Citation:

T. Hatakeyama et al., "Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices", Materials Science Forum, Vols. 527-529, pp. 1179-1182, 2006

Online since:

October 2006

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Price:

$35.00

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