10 kV, 87 mΩcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors

Abstract:

Article Preview

SiC JFET, compared with SiC MOSFET, is attractive for high power, high temperature applications because it is free of gate oxide reliability issues. Trenched-and-Implanted VJFET (TIVJFET) does not require epi-regrowth and is capable of high current density. In this work we demonstrate two trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistors (TI-VJFET), based on 120μm, 4.9×1014cm-3 and 100μm, 6×1014cm-3 drift layers. The corresponding devices showed blocking voltage (VB) of 11.1kV and specific on-resistance (RSP_ON) of 124m7cm2, and VB of 10kV and RSP_ON of 87m7cm2. A record-high value for VB 2/RSP_ON of 1149MW/cm2 was achieved for normally-off SiC FETs.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1187-1190

DOI:

10.4028/www.scientific.net/MSF.527-529.1187

Citation:

Y. Z. Li et al., "10 kV, 87 mΩcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors", Materials Science Forum, Vols. 527-529, pp. 1187-1190, 2006

Online since:

October 2006

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.