10 kV, 87 mΩcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors


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SiC JFET, compared with SiC MOSFET, is attractive for high power, high temperature applications because it is free of gate oxide reliability issues. Trenched-and-Implanted VJFET (TIVJFET) does not require epi-regrowth and is capable of high current density. In this work we demonstrate two trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistors (TI-VJFET), based on 120μm, 4.9×1014cm-3 and 100μm, 6×1014cm-3 drift layers. The corresponding devices showed blocking voltage (VB) of 11.1kV and specific on-resistance (RSP_ON) of 124m7cm2, and VB of 10kV and RSP_ON of 87m7cm2. A record-high value for VB 2/RSP_ON of 1149MW/cm2 was achieved for normally-off SiC FETs.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




Y. Z. Li et al., "10 kV, 87 mΩcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors", Materials Science Forum, Vols. 527-529, pp. 1187-1190, 2006

Online since:

October 2006




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DOI: 10.1109/16.992876

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5 10 15.

[20] [40] [60] [80] 100 IG=0. 5mA IG at VD=15V VG=2V VG=2. 5V VG=3V JD [A/cm.

[2] ] ID [mA] VD [V] 5000 10000 IG=24µµµµA TIVJFET-2T Wch=0. 7µµµµm Area: 9. 3x10-4cm2 VG=0V 10kV 0. 4mA 10xID.

[20] [40] [60] [80] 100 Ron=87mΩΩΩΩcm2 (JD=23A/cm2, VD=2V, VG=3V) Fig. 6. Measured I-V curves of a fabricated 10 kV TI-VJFET.

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