SiC Smart Power JFET Technology for High-Temperature Applications

Abstract:

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Wide bandgap semiconductor materials such as SiC or GaN are very attractive for use in high-power, high-temperature, and/or radiation resistant electronics. Monolithic or hybrid integration of a power transistor and control circuitry in a single or multi-chip wide bandgap power semiconductor module is highly desirable for such applications in order to improve the efficiency and reliability. This paper describes a new monolithic SiC JFET IC technology for high-temperature smart power applications that allows for on-chip integration of control circuitry and normally-off power switch. In order to demonstrate the feasibility of this technology, hybrid logic gates with maximum switching frequency > 20 MHz and normally-off 900 V power switch have been fabricated on alumina substrates using discrete enhanced and depletion mode vertical trench JFETs.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1207-1210

DOI:

10.4028/www.scientific.net/MSF.527-529.1207

Citation:

I. Sankin et al., "SiC Smart Power JFET Technology for High-Temperature Applications", Materials Science Forum, Vols. 527-529, pp. 1207-1210, 2006

Online since:

October 2006

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Price:

$35.00

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