SiC Smart Power JFET Technology for High-Temperature Applications
Wide bandgap semiconductor materials such as SiC or GaN are very attractive for use in high-power, high-temperature, and/or radiation resistant electronics. Monolithic or hybrid integration of a power transistor and control circuitry in a single or multi-chip wide bandgap power semiconductor module is highly desirable for such applications in order to improve the efficiency and reliability. This paper describes a new monolithic SiC JFET IC technology for high-temperature smart power applications that allows for on-chip integration of control circuitry and normally-off power switch. In order to demonstrate the feasibility of this technology, hybrid logic gates with maximum switching frequency > 20 MHz and normally-off 900 V power switch have been fabricated on alumina substrates using discrete enhanced and depletion mode vertical trench JFETs.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
I. Sankin et al., "SiC Smart Power JFET Technology for High-Temperature Applications", Materials Science Forum, Vols. 527-529, pp. 1207-1210, 2006