Growth of Cubic Silicon Carbide Crystals from Solution

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Cubic-silicon carbide crystals have been grown from solution by using the traveling-zone method. In this technique a molten silicon zone heated by induction coils is held between two rods of polycrystalline silicon carbide. Due to the growth set-up and boundary conditions, different mass transfer mechanisms are operative : diffusion, buoyancy, Marangoni convection and forced convection. The growth experiments have been performed on various seed crystals. Cubic SiC crystals were grown with a [111] habit on the [0001] silicon faces of 4H SiC seeds. The polytype 3C-SiC was identified by Transmission Electron Microscopy. Micro Raman spectroscopy and photoluminescence analyses showed good crystalline quality with few 6H inclusions.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

123-126

Citation:

J. Eid et al., "Growth of Cubic Silicon Carbide Crystals from Solution", Materials Science Forum, Vols. 527-529, pp. 123-126, 2006

Online since:

October 2006

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$38.00

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