Growth of Cubic Silicon Carbide Crystals from Solution
Cubic-silicon carbide crystals have been grown from solution by using the traveling-zone method. In this technique a molten silicon zone heated by induction coils is held between two rods of polycrystalline silicon carbide. Due to the growth set-up and boundary conditions, different mass transfer mechanisms are operative : diffusion, buoyancy, Marangoni convection and forced convection. The growth experiments have been performed on various seed crystals. Cubic SiC crystals were grown with a  habit on the  silicon faces of 4H SiC seeds. The polytype 3C-SiC was identified by Transmission Electron Microscopy. Micro Raman spectroscopy and photoluminescence analyses showed good crystalline quality with few 6H inclusions.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
J. Eid et al., "Growth of Cubic Silicon Carbide Crystals from Solution", Materials Science Forum, Vols. 527-529, pp. 123-126, 2006