SiC Power MOSFETs – Status, Trends and Challenges

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SiC power MOSFETs are attractive electronic power switches for innovative power supply and motor drive solutions. The paper discusses this statement and specifies market segments offering the best chances for a commercialization. Due to well-known difficulties in achieving adequate channel conductivity, a lot of SiC-MOSFET publications focus on the channel mobility. However, for a power MOSFET this is only one important parameter affecting the performance. Other characteristics have to be considered too for an honest evaluation: transfer characteristics and blocking capability over the standard operation temperature range, handling of gate oxide stress and related reliability issues, capability of paralleling, dynamic stability, body diode characteristics, reproducibility of the fabrication process and device size. Various attempts have been made in recent years in order to address these features. Approaches differ in the use of different crystal orientations and polytypes, accumulation or inversion channel, implanted or epitaxially grown channels and novel oxidation techniques. Worldwide a trend to the planar DIMOS concept can be observed. Our present results are shown for a power SiC MOSFET designed for 10 A / 1200 V. Key data are a specific on-resistance of 12 m1cm2, the desired low but positive increase of the onresistance with temperature, static avalanche (20 mA DC @1574 V), short-circuit stability at 600 V for 20 9s and robust switching behavior.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1255-1260

Citation:

D. Peters et al., "SiC Power MOSFETs – Status, Trends and Challenges", Materials Science Forum, Vols. 527-529, pp. 1255-1260, 2006

Online since:

October 2006

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$38.00

[1] W. Draper, compoundsemiconductor. net/articles/magazine/June (2005).

[2] M. März, Kolloquium zur Halbleitertechnologie und Messtechnik, Univ. Erlangen (2005), http: /www. iis-b. fhg. de/de/arb_geb/leistungssys_pub. htm.

[3] C. Rebbereh, H. Schierling, M. Braun, Proc. of 10 th EPE 2003, ISBN 90-758 2-07-7.

[4] R. Schörner et al., IEEE Electron Device Lett., Vol. 20, Nr. 5, May 1999, pp.241-244.

[5] K. Hara, Int. Conf. III-Nitrides&Rel. Mat., ICSCIII-N'97, Sept 2, 1997, pp.1717-1731.

[6] A.K. Agarwal et al., IEEE Int. Symp. Power Semic. Dev. & ICs, Hawaii, 20-23 May (1996).

[7] J. Tan, J. A. Cooper, Jr., M. R. Melloch, IEEE Electron Device Lett., 19 (1998), p.487.

[8] D. Peters et al., IEEE Trans. on Electr. Dev., Vol. 46, No. 3, Mar 1999, pp.542-545.

[9] M. Matin, A. Saha, J.A. Cooper, IEEE Trans. on Electron Dev. 51 (2004), pp.1721-25.

[10] D. Peters, R. Schoerner, European Patent EP1002334 A1 20000524.

[11] R. Singh et al., IEEE Trans. on Electr. Dev., Vol. 50, No. 2, Feb. 2003, pp.471-478.

[12] S. Harada, AIST News release, March 3, 2005, Tsukuba.

[13] S. Harada et al., IEEE Electron Device Letters, Vol. 25, No. 5, May 2004, pp.292-294.

[14] Y. Tarui et al., Mitsubishi Electric Corporation, these proceedings.

[15] D. Peters et al., Proc. of 10 th EPE 2003, ISBN 90-758 2-07-7.

[16] G. Ghibaudo, Electron Letters, Vol. 24, 1988, pp.534-545.

[17] H. Mitlehner et al., ISPSD'98, Tokyo: Inst. Electr. Eng. Japan, 1998. pp.127-130.