Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs


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8 mΩ-cm2, 1.8 kV power DMOSFETs in 4H-SiC are presented in this paper. A 0.5 μm long MOS gate length was used to minimize the MOS channel resistance. The DMOSFETs were able to block 1.8 kV with the gate shorted to the source. At room temperature, a specific onresistance of 8 mΩ-cm2 was measured with a gate bias of 15 V. At 150 oC, the specific onresistance increased to 9.6 mΩ-cm2. The increase in drift layer resistance due to a decrease in bulk electron mobility was partly cancelled out by the negative shift in MOS threshold voltage at elevated temperatures. The device demonstrated extremely fast, low loss switching characteristics. A significant improvement in converter efficiency was observed when the 4H-SiC DMOSFET was used instead of an 800 V silicon superjunction MOSFET in a simple boost converter configuration.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




S. H. Ryu et al., "Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs", Materials Science Forum, Vols. 527-529, pp. 1261-1264, 2006

Online since:

October 2006




[1] A. Agarwal et al., Silicon Carbide, Recent Major Advances, Springer-Verlag Berlin Heidelberg 2004, Germany, p.785.

[2] G. Y. Chung et al.: Applied Physics Letters 76(13), (March 2000), p.1713.

[3] M. Das: Materials Science Forum Vol. 457-460 (2004), p.1275.

[4] S. Ryu et al.: MRS Proc. Vol. 764 (2003), p.69.

[5] S. Ryu et al.: IEEE Electron Device Letters, Vol. 23, No. 6, (June 2002), p.321.

[6] M. Matin et al.: IEEE Trans. ED, Vol. 51, No. 10, (Oct. 2004), p.1721.

[7] S. Ryu et al.: Materials Science Forum Vol. 483-485 (2005), p.797.

[8] http: /www. infineon. com/…/SPP_A11N80C3. pdf.

[9] http: /www. cree. com/ftp/pub/CSD10120. pdf 100 200 300 400 500 76 78 80 82 84 86 88 90 92 94 96 η (%) freq. (kHz) 4H-SiC DMOSFET Si SJ MOSFET Fig. 7. Boost converter efficiency measured using a 0. 0278 cm 2 4HSiC DMOSFET and a Silicon superjunction MOSFET.

[8] .