High Power-Density 4H-SiC RF MOSFETs

Abstract:

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We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To our knowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1277-1280

DOI:

10.4028/www.scientific.net/MSF.527-529.1277

Citation:

G. Gudjónsson et al., "High Power-Density 4H-SiC RF MOSFETs", Materials Science Forum, Vols. 527-529, pp. 1277-1280, 2006

Online since:

October 2006

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Price:

$35.00

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