Switching Characteristics of SiC-MOSFET and SBD Power Modules

Abstract:

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Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of SiC modules decrease monotonically with a decrease in gate resistance, namely switching speed. The result shows the potential of unipolar device SiC power modules.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1289-1292

DOI:

10.4028/www.scientific.net/MSF.527-529.1289

Citation:

M. Imaizumi et al., "Switching Characteristics of SiC-MOSFET and SBD Power Modules", Materials Science Forum, Vols. 527-529, pp. 1289-1292, 2006

Online since:

October 2006

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Price:

$35.00

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