Switching Characteristics of SiC-MOSFET and SBD Power Modules
Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of SiC modules decrease monotonically with a decrease in gate resistance, namely switching speed. The result shows the potential of unipolar device SiC power modules.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
M. Imaizumi et al., "Switching Characteristics of SiC-MOSFET and SBD Power Modules", Materials Science Forum, Vols. 527-529, pp. 1289-1292, 2006