A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices

Abstract:

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Gate oxide reliability measurements of 4H-SiC DMOSFETs were performed using the Time Dependent Dielectric Breakdown (TDDB) technique at 175°C. The oxide lifetime is then plotted as a function of the electric field. The results show the projected oxide lifetime to be > 100 years at an operating field of ~3 MV/cm. Device reliability of 2.0 kV DMOSFETs was studied by stressing the gate with a constant gate voltage of +15 V at a temperature of 175°C, and monitoring the forward I-V characteristics and threshold voltage for device stability. Our very first measurements show very little variation between the pre-stress and post-stress conditions up to 1000 hrs of operation at 175°C. In addition, forward on-current stressing of the MOSFETs show the devices to be stable up to 1000 hrs of operation.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1313-1316

DOI:

10.4028/www.scientific.net/MSF.527-529.1313

Citation:

S. Krishnaswami et al., "A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices", Materials Science Forum, Vols. 527-529, pp. 1313-1316, 2006

Online since:

October 2006

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Price:

$35.00

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