Paper Title:
High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes
  Abstract

Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range Т = 300 – 773 К. Analysis of the forward current-voltage characteristics and reverse current recovery waveforms shows that the lifetimeτ of non-equilibrium carriers in the base of the diodes steadily increases with temperature across the entire temperature interval. The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, Rd. As a result, Rd is virtually temperature independent. An appreciable modulation of the base resistance takes place at room temperature even at a relatively small current density j of 20 A/cm2. At T = 800 K and j = 20 A/cm2, a very deep level of the base modulation has been observed. The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed 2×10-6 А at T = 773 K and a reverse bias of 300 V.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1339-1342
DOI
10.4028/www.scientific.net/MSF.527-529.1339
Citation
M. E. Levinshtein, P. A. Ivanov, M. S. Boltovets, V. A. Krivutsa, J. W. Palmour, M. K. Das, B. A. Hull, "High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes", Materials Science Forum, Vols. 527-529, pp. 1339-1342, 2006
Online since
October 2006
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$35.00
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