High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes
Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range Т = 300 – 773 К. Analysis of the forward current-voltage characteristics and reverse current recovery waveforms shows that the lifetimeτ of non-equilibrium carriers in the base of the diodes steadily increases with temperature across the entire temperature interval. The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, Rd. As a result, Rd is virtually temperature independent. An appreciable modulation of the base resistance takes place at room temperature even at a relatively small current density j of 20 A/cm2. At T = 800 K and j = 20 A/cm2, a very deep level of the base modulation has been observed. The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed 2×10-6 А at T = 773 K and a reverse bias of 300 V.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
M. E. Levinshtein et al., "High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes", Materials Science Forum, Vols. 527-529, pp. 1339-1342, 2006