Demonstration of a 4H SiC Betavoltaic Cell

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A betavoltaic cell in 4H SiC is demonstrated. An abrupt p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.95V and a short circuit current density of 8.8 nA/cm2 were measured in a single p-n junction. An efficiency of 3.7% was obtained. A simple photovoltaic type model was used to explain the results. Good correspondence with the model was obtained. Fill factor and backscattering effects were included. Efficiency was limited by edge recombination and poor fill factor.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1351-1354

DOI:

10.4028/www.scientific.net/MSF.527-529.1351

Citation:

M.V.S. Chandrashekhar et al., "Demonstration of a 4H SiC Betavoltaic Cell", Materials Science Forum, Vols. 527-529, pp. 1351-1354, 2006

Online since:

October 2006

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Price:

$38.00

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