High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
Forward voltage (VF) drift, in which a 4H-SiC PiN diode suffers from an irreversible increase in VF under forward current flow, continues to inhibit commercialization of 4H-SiC PiN diodes. We present our latest efforts at fabricating high blocking voltage (6 kV), high current (up to 50 A) 4H-SiC PiN diodes with the best combination of reverse leakage current (IR), forward voltage at rated current (VF), and VF drift yields. We have achieved greater than 60% total die yield onwafer for 50 A diodes with a chip size greater than 0.7 cm2. A comparison of the temperature dependent conduction and switching characteristics between a 50 A/6 kV 4H-SiC PiN diode and a commercially available 60 A/4.5 kV Si PiN diode is also presented.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
B. A. Hull et al., "High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications", Materials Science Forum, Vols. 527-529, pp. 1355-1358, 2006