CM-Wave Modulator with High-Voltage 4H SiC pin Diodes

Abstract:

Article Preview

The results of mathematical simulation, development and investigation of a modulator with 4H SiC pin diodes are presented. We simulated the effect of bias modes on isolation and transmission between the modulator input and output in the 1−20 GHz frequency range, for pin diodes with 6 μm long i-region. It was calculated that the isolation in a modulator with three diodes may run into –45 dB, the transmission losses being no more than 2 dB. The modulator was made as an integrated circuit (IC) on the basis of nonsymmetrical strip lines (characteristic impedance of 50 Ω) incorporating chips of high-voltage 4H SiC pin diodes with iregion 6 μm long, mesa diameter of 60 μm and calculated avalanche breakdown voltage of 1000 V. We studied the experimental parameters of this modulator as a function of forward current and reverse voltage in the 2.4−12 GHz frequency range, as well as the microwave signal switching behavior. It was determined that the modulator is characterized by transmission losses of 1.0−2.0 dB and isolation of 27−34 dB (in the 2.4−7 GHz frequency range). The formation of microwave pulses with leading (trailing) edge of 22 (29) ns was also observed.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1379-1383

Citation:

M. S. Boltovets et al., "CM-Wave Modulator with High-Voltage 4H SiC pin Diodes", Materials Science Forum, Vols. 527-529, pp. 1379-1383, 2006

Online since:

October 2006

Export:

Price:

$38.00

[1] M.S. Boltovets, V.V. Basanets, N. Camara, V.A. Krivutsa, K. Zekentes: Investigation of microwave switching 4H SiC p-i-n diodes in the 20÷500 °C temperature range, Proc. of the 5th European Conference on Silicon Carbide and Related Materials (ECSCRM-2004), August 31- September 4, 2004, Bologna, Italy, Mater. Sci. Forum Vol. 483-485 (2005).

DOI: https://doi.org/10.4028/www.scientific.net/msf.483-485.997

[2] A.V. Bludov, M.S. Boltovets, K.V. Vassilevski, A.V. Zorenko, K. Zekentes, A.A. Lebedev, and V.A. Krivutsa: Simulation and prototype fabrication of microwave modulators with 4H SiC p-i-n diodes. Proc. of the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM-2003), October 5-10, 2003, Lyon, France, Mater. Sci. Forum Vol. 457-460 (2004).

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.1089

[3] J. Helzajn: Passive and Active Microwave Circuits. A Wiley-Interscience Publication. John Wiley&Sons, (1978).

[4] M.S. Boltovets, V.V. Basanets, N. Camara, V.A. Krivutsa, and K. Zekentes: Investigation of packaged high-voltage 4H SiC pin diodes in the 20-700 °C temperature range. Proc. of the 5th International Conference on Silicon Carbide and Related Materials (ICSCRM-2005), September 18-23, 2005, Pittsburgh, Pennsylvania, USA, these Proceedings.

DOI: https://doi.org/10.4028/www.scientific.net/msf.527-529.1375