High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n+-GaN Subcontact Layer


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4H SiC high power photoconductive semiconductor switching devices were fabricated. A highly doped n+-GaN subcontact epilayer was grown on SiC by organometallic vapor phase epitaxy in order to improve ohmic contact and avoid contact damage or degradation due to current filamentation, under high power operation. With an n+-GaN subcontact layer, the contact resistance was reduced and current crowding alleviated. Therefore the electrodes were not damaged or degraded at high power operation. Photocurrent up to 200 A and breakdown voltage up to 2900 V have been observed for the devices.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




K. Zhu et al., "High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n+-GaN Subcontact Layer", Materials Science Forum, Vols. 527-529, pp. 1387-1390, 2006

Online since:

October 2006




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