First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs


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For the first time, 4H-SiC RF bipolar junction transistors have been used to produce an output power in excess of 2.1 kW at 425 MHz. For an input pulse width of 2 μs and 1% duty cycle, the power gain at peak output power is 6.3 dB with the collector efficiency and power added efficiency [PAE] being 45% and 35%, respectively, at a collector supply voltage of 75 V in a class C configuration. The package consists of 24 cells (2 chips) having an emitter periphery of approximately 1 inch per cell. Each cell produced a DC current gain (β) of 15 and a common emitter breakdown voltage (BVCEO) greater than 250 V. A peak output power of 87 W per cell was obtained at 425 MHz, as compared to the earlier report of 50 W per cell [1, 2] by using a shorter pulse width and duty cycle.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




A. K. Agarwal et al., "First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs", Materials Science Forum, Vols. 527-529, pp. 1413-1416, 2006

Online since:

October 2006




[1] Anant Agarwal et al.: Digest of the 2002 IEEE Lester Eastman Conference on High Power Devices, University of Delaware, (2002), p.10.

[2] Stephen E. Saddow and Anant Agarwal, Advances in SiC Processing and Applications, 1st ed., Artech House, Inc., (2004), p.177.

[3] S-H. Ryu et al.: IEEE Electron Device Letters, Vol. 22, (2001), p.124. Class C, CE Vcc = 75 V, f0 = 425 MHz Pulse width = 2 µs Duty cycle = 1.