First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs
For the first time, 4H-SiC RF bipolar junction transistors have been used to produce an output power in excess of 2.1 kW at 425 MHz. For an input pulse width of 2 μs and 1% duty cycle, the power gain at peak output power is 6.3 dB with the collector efficiency and power added efficiency [PAE] being 45% and 35%, respectively, at a collector supply voltage of 75 V in a class C configuration. The package consists of 24 cells (2 chips) having an emitter periphery of approximately 1 inch per cell. Each cell produced a DC current gain (β) of 15 and a common emitter breakdown voltage (BVCEO) greater than 250 V. A peak output power of 87 W per cell was obtained at 425 MHz, as compared to the earlier report of 50 W per cell [1, 2] by using a shorter pulse width and duty cycle.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
A. K. Agarwal et al., "First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs", Materials Science Forum, Vols. 527-529, pp. 1413-1416, 2006