Optimization of the Specific On-Resistance of 4H-SiC BJTs


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We evaluate the performance capabilities and limitations of high voltage 4H-SiC based Bipolar Junction Transistors (BJTs). Experimental forward characteristics of a 4kV BJT are studied and simulations are employed to determine the factors behind the higher than expected specific onresistance (Ron,sp) for the device. The impact of material (minority carrier lifetimes), processing (surface recombination velocity) and design (p contact spacing from the emitter mesa) parameters on the forward active performance of this device are discussed and ways to lower Ron,sp, below the unipolar level, and increase the gain (β) are examined.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




S. Balachandran et al., "Optimization of the Specific On-Resistance of 4H-SiC BJTs", Materials Science Forum, Vols. 527-529, pp. 1429-1432, 2006

Online since:

October 2006




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DOI: https://doi.org/10.4028/www.scientific.net/msf.483-485.901