High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
This paper summarizes the recent demonstration of 3200 V, 10 A BJT devices with a high common emitter current gain of 44 in the linear region, and a specific on-resistance of 8.1 mΩ- cm2 (10 A at 0.90 V with a base current of 350 mA and an active area of 0.09 cm2). The onresistance increases to 40 mΩ-cm2 at 350°C, while the DC current gain decreases to 30. A sharp avalanche behavior was observed with a leakage current of 10 μA at a collector voltage of 3.2 kV.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
S. Krishnaswami et al., "High Temperature Characterization of 4H-SiC Bipolar Junction Transistors", Materials Science Forum, Vols. 527-529, pp. 1437-1440, 2006