Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices


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We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




Y. Sui et al., "Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices", Materials Science Forum, Vols. 527-529, pp. 1449-1452, 2006

Online since:

October 2006




[1] MEDICI™ Two-Dimensional Device Simulation Program, Sunnyvale, CA (1997).

[2] M. Matin, A. Saha, and J. A. Cooper, Jr.: IEEE Trans. Electron Devices, Vol. 51 (2004), p.1721.

[3] J. B. Casady and R. W. Johnson: Solid-State Electronics, Vol. 39 (1996), p.1409.

[4] M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Eds.: Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, and SiGe (John Wiley and Sons, New York 2001).

[5] O. Kordina and J. P. Bergman: Appl. Phys. Lett., Vol. 69 (1996), p.679.

[6] M. Ruff, H. Mitlehner, and R. Helbig: IEEE Tran. Electron Devices, Vol. 41 (1994), p.1040. Temperature n-MOSFET p-IGBT n-IGBT pnpn thyristor npnp thyristor.

[27] °C 25 A/cm.

[2] 41 A/cm.

[2] 49 A/cm.

[2] 73 A/cm.

[2] 76 A/cm.

[2] 225 °C 14 A/cm.

[2] 44 A/cm.

[2] 52 A/cm.

[2] 78 A/cm.

[2] 83 A/cm.

[2] Table 2. On-state current density at a package power dissipation of 300 W/cm 2.

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