Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

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We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1449-1452

Citation:

Y. Sui et al., "Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices", Materials Science Forum, Vols. 527-529, pp. 1449-1452, 2006

Online since:

October 2006

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$38.00

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[27] °C 25 A/cm.

[2] 41 A/cm.

[2] 49 A/cm.

[2] 73 A/cm.

[2] 76 A/cm.

[2] 225 °C 14 A/cm.

[2] 44 A/cm.

[2] 52 A/cm.

[2] 78 A/cm.

[2] 83 A/cm.

[2] Table 2. On-state current density at a package power dissipation of 300 W/cm 2.

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