Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

Abstract:

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We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1449-1452

DOI:

10.4028/www.scientific.net/MSF.527-529.1449

Citation:

Y. Sui et al., "Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices", Materials Science Forum, Vols. 527-529, pp. 1449-1452, 2006

Online since:

October 2006

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Price:

$35.00

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