Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates


Article Preview

Cubic GaN, AlxGa1-xN/GaN and InyGa1-yN/GaN multiple quantum well (MQW) layers were grown by plasma assisted molecular beam epitaxy on 200 &m thick free standing 3C-SiC substrates. The influence of the surface roughness of the 3C-SiC substrates and the influence of metal coverage during growth are discussed. Optimum growth conditions of c-III nitrides exist, when a one monolayer Ga coverage is formed at the growing surface. The improvement of the structural properties of cubic III-nitride layers and multilayers grown on 3C-SiC substrates is demonstrated by 1 μm thick c-GaN layers with a minimum x-ray rocking curve width of 16 arcmin, and by c-AlGaN/GaN and c-InGaN/GaN MQWs which showed up to five satellite peaks in X-ray diffraction, respectively.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow






D. J. As et al., "Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates", Materials Science Forum, Vols. 527-529, pp. 1489-1492, 2006

Online since:

October 2006




[1] D.J. As, in Optoelectronic Properties of Semiconductors and Superlattices, series editor M.O. Manasreh, (Taylor & Francis Books, Inc., New York, 2003), Vol. 19 chapter 9, pp.323-450.

[2] HOYA Advanced Semiconductor Technologies Co., Ltd., 1-17-16 Tanashioda, Sagamihara, Kanagawa 229-1125, Japan, Home page: URL: http: /www. hast. co. jp.

[3] D.J. As, D. Schikora, and K. Lischka: phys. stat. sol. (c) 0 (2003), p.1607.

[4] J. Schörmann, S. Potthast, M. Schnietz, S.F. Li, D.J. As, and K. Lischka: phys. stat. sol. (c) (2005), in Proc. of ICNS-6, Bremen (2005).

[5] A. Nagayama, H. Sawada, E. Takuma, R. Katayama, K. Onabe, H. Ichinose, and Y. Shiraki: Inst. Phys. Conf. Ser. 170 (2002), p.749.

[6] J.E. Ayers: J. Appl. Phys. 78 (1995), p.3724.

[7] H. Okumura, K. Ohta, G. Feuillet, K. Balakrishnan, S. Chichibu, H. Hamaguchi, P. Hacke, and S. Yoshida: J. Crystal Growth 178 (1997), p.113.

DOI: 10.1016/s0022-0248(97)00084-5

[8] B. Daudin, G. Feuillet, J. Hübner, Y. Samson, F. Widmann, A. Philippe, C. Bru-Chevallier, G. Guillot, E. Bustarret, G. Bentoumi, and A. Deneuville: J. Appl. Phys. 84 (1998), p.2295.

DOI: 10.1063/1.368296

[9] N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies: J. Appl. Phys. 86 (1999), p.3714.

[10] S.F. Li, D.J. As, K. Lischka, D.G. Pacheco-Salazar, L.M.R. Scolfaro, J.R. Leite, F. Cerdeira, and E.A. Meneses: MRS Symp. Proc. Vol. 831 (2005), E8. 15.

DOI: 10.1557/proc-831-e8.15

[11] F. Calle, F.B. Naranjo, S. Fernandez, M.A. Sanchez-Garcia, E. Calleja and E. Munoz: phys. stat. sol. (a) 192 (2002), p.277.

In order to see related information, you need to Login.