Growth of AlN and AlN-SiC Solid Solution by Sublimation Method

Abstract:

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AlN is considered as the most suitable substrate material for further development of high quality and high performance nitride-based micro- and opto-electronics. AlN ingots are often grown on SiC seeds. To solve the formation of cracks due to the difference in lattice parameters between seed and crystal we chose to “adapt” the lattice mismatch by a buffer layer of the (AlN)x(SiC)1-x solid solution. This paper gives some inputs on the growth of AlN and the solid solution by the sublimation technique, in terms of materials compatibility, hetero- and homo-epitaxial growth of AlN and on the preparation of crack-free solid solution single crystals.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1501-1504

DOI:

10.4028/www.scientific.net/MSF.527-529.1501

Citation:

M. Anikin et al., "Growth of AlN and AlN-SiC Solid Solution by Sublimation Method ", Materials Science Forum, Vols. 527-529, pp. 1501-1504, 2006

Online since:

October 2006

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Price:

$35.00

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