Anisotropic Properties of GaN Studied by Raman Scattering


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The phonon anisotropy property of the GaN wurtzite crystal is studied using angular dependent Raman spectroscopy both theoretically and experimentally. The polarized Raman scattering spectra were recorded from cross-sections of c-axis oriented GaN films as a function of the angle between the incident laser polarization direction and the film normal direction in three different configurations. The Raman intensity of A1(TO) showed a sinusoidal dependence on the rotating angle, as also did the E1(TO) mode, while the E2 mode has a quite different behavior. The theoretical fit takes into account the susceptibility contribution and the phase differential of different vibrating elements.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




H.C. Lin et al., "Anisotropic Properties of GaN Studied by Raman Scattering", Materials Science Forum, Vols. 527-529, pp. 1517-1520, 2006

Online since:

October 2006




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