Anisotropic Properties of GaN Studied by Raman Scattering

Abstract:

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The phonon anisotropy property of the GaN wurtzite crystal is studied using angular dependent Raman spectroscopy both theoretically and experimentally. The polarized Raman scattering spectra were recorded from cross-sections of c-axis oriented GaN films as a function of the angle between the incident laser polarization direction and the film normal direction in three different configurations. The Raman intensity of A1(TO) showed a sinusoidal dependence on the rotating angle, as also did the E1(TO) mode, while the E2 mode has a quite different behavior. The theoretical fit takes into account the susceptibility contribution and the phase differential of different vibrating elements.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1517-1520

DOI:

10.4028/www.scientific.net/MSF.527-529.1517

Citation:

H.C. Lin et al., "Anisotropic Properties of GaN Studied by Raman Scattering", Materials Science Forum, Vols. 527-529, pp. 1517-1520, 2006

Online since:

October 2006

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Price:

$35.00

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