Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures


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The investigated AlGaN epitaxial layers were grown by hydride vapor phase epitaxy (HVPE) on a commercial P+ SiC substrate or on an N+ SiC Lely substrate with a p+ SiC layer previously grown by sublimation epitaxy. To investigate the electrical characteristics of the n-p heterojunction, mesa structures of 100, 200 and 1500 microns in diameter were fabricated by reactive ion etching. Investigation of electrical characteristics shows good quality of grown n- AlGaN/p-SiC heterojunctions. This shows applicability of this technological combination for producing n-AlGaN/p-SiC bipolar or FET transistors.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




A. A. Lebedev et al., "Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures", Materials Science Forum, Vols. 527-529, pp. 1537-1541, 2006

Online since:

October 2006




[1] N.I. Kuznetsov, A. E Gubenco, A.E. Nikolaev, Yu.V. Melnik, M.N. Blashenkov, I.P. Nikitina, and V.A. Dmitriev: Mat. Science and Eng.: B46 (1997), pp.74-78.

[2] J.T. Torvik, M. Leksono, J.I. Pankove, B.V. Zeghbroeck, H.M. Ng, and T.D. Moustakas: Appl. Phys. Lett. 72 (1998), p.1371.

[3] J.I. Pankove, S.S. Chang, H.C. Lee, R. Molnar, T.D. Moustakas, and B. Van Zeghbroeck: Proc. IEDM, San Francisco, CA, (1994), pp.389-92.

[4] J.T. Torvik, C. -H. Qiu, M. Leksono, and J I. Pankove: Appl. Phys. Lett. 72 (1998), p.945.

[5] J. Vacas, H. Lahre`che, T. Monteiro, C. GAspar, E. Pereira, C. Brylinski, and M.A. d. FortePoisson: Mater. Sci. Forum 338-342 (2000), p.1651.

[6] E. Danielsson, C. -M. Zetterling, M. Ostling, B. Breitholtz, K. Linthicum, D.B. Thomson, O. -H. Nam, and R.F. Davis: Mater. Sci. Eng. B B61-62 (1999), p.320.

[7] E. Danielsson, S. -K. Lee, C. -M. Zetterling, M. Ostling, A. Nikolaev, I. Nikitina, and A. Dimitriev: IEEE Trans. Electron Devices 48 (2001), p.444.

[8] W. San, A.J. Ficher, J.J. Song, G.E. Bilman, H.S. Kong, M.T. Leonard, W.G. Perry, M.D. Bremser and R.F. Davis: Appl. Phys. Lett. 69(6), (1996), p.740.

[9] A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova, B. Luo, J. Kim, R. Mehandru, F. Ren, K.P. Lee, S.J. Pearton, A.V. Osinsky and P.E. Norris: Appl. Phys. Lett., 80 (2002), p.3352.