Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC


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3C-(Si1-xC1-y)Gex+y ternary alloys were grown on 8.5° off axis 4H-SiC substrates by solid source molecular beam epitaxy in a temperature range between 750°C and 950°C. Energy dispersive X-ray (EDX) analysis revealed a decrease of the Ge incorporation versus substrate temperature. This effect is due to the fixed Si/Ge ratio during the epitaxial growth. The Ge distribution within the grown epitaxial layers was found to be nearly homogeneous. The investigations by atomic location by channeling enhanced microanalysis allowed the conclusion that Ge is located mainly at Si lattice sites.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




J. Pezoldt et al., "Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 1559-1562, 2006

Online since:

October 2006




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