SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor


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4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is necessary compared with the silane/ethylene system. This ratio has to be reduced especially at higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS (trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine, that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to reach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughness and the crystal quality are very promising.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




S. Leone et al., "SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor", Materials Science Forum, Vols. 527-529, pp. 179-182, 2006

Online since:

October 2006




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