Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates


Article Preview

Thick epitaxial layers of 4H-SiC both n- and p-type were grown using horizontal Hot- Wall CVD (HWCVD). No large difference in the carrier lifetime was observed for the layers grown on n- and p-type substrates. The carrier lifetime usually increases with the increasing thickness of the epilayer. To investigate if the growth conditions and material properties are changing during the longer growth time a sample was prepared with uniformly varying epilayer thickness from 20μm on one side to 110μm on other side. Results of optical and electrical measurements, the variation in background impurities and other deep levels are discussed. Furthermore, the properties of thick layers grown on on-axis substrates are presented.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




J. ul Hassan et al., "Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates", Materials Science Forum, Vols. 527-529, pp. 183-186, 2006

Online since:

October 2006




[1] B. J. Baliga: Physics of Semiconductor Power Devices. JWS Publishing, (1996).

[2] T.P. Chow, V. Khemka, J. Fedison, N. Ramungul, K. Matocha, Y. Tang, and R.J. Gutmann: Solid-State Electronics 44 (2000), p.277.


[3] O. Kordina, A. Henry, J. P. Bergman, N. T. Son, W. M. Chen, C. Hallin, and E. Janzén: Applied Physics Letters, v 66, n 11, 13 March 1995, p.1373.

[4] C. Hallin, Q. Wahab, I. Ivanov, J. P. Bergman, E. Janzén: Materials Science Forum, 457- 460, ICSCRM 2003, 2004, p.193.

[5] J.P. Bergman, O. Kordina and E. Janzén: Phys. Stat. Sol. (a) 162 (1997), p.65.

[6] A. Henry, U. Forsberg, M. S. Janson, and E. Janzén: Journal of Applied Physics, v 94, (2003) p.2901.

[7] K. Danno, T. Kimoto, and H. Matsunami: Applied Physics Letters 86, n 12, (2005), p.122104.

[8] Dalibor, T. Pensl, G. Matsunami, H. Kimoto, T. Choyke, W.J. Schoener, and A. Nordell: Physica Status Solidi A, 162, n 1, (1997), p.199.