High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD


Article Preview

A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor using a standard chemistry of silane-propane-hydrogen, producing repeatable growth rates up to 32 μm/h. The growth rate was studied as a function of pressure, silane flow rate, and growth time. The structural quality of the films was determined by X-ray diffraction. A 65 μm thick epitaxial layer was grown at the 32 μm/h rate, resulting in a smooth, specular film morphology with occasional carrot-like and triangular defects. The film proved to be of high structural quality with an X-ray rocking curve FWHM value of the (0004) peak of 11 arcseconds.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




R. L. Myers-Ward et al., "High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD", Materials Science Forum, Vols. 527-529, pp. 187-190, 2006

Online since:

October 2006




[1] K. Masahara, T. Takahashi, M. Kushibe, T. Ohno, J. Nishio, K. Kojima, Y. Ishida, T. Suzuki, T. Tanaka, S. Yoshida, and K. Arai: Mat. Sci. Forum 389-393 (2002), p.179.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.179

[2] K. Fujihira, T. Kimoto, and H. Matsunami: Mat. Sci. Forum 433-436 (2003), p.161.

[3] A. Ellison, J. Zhang, W. Magnusson, A. Henry, Q. Wahab, J.P. Bergman, C. Hemmingsson, N.T. Son, and E. Janzén: Mat. Sci. Forum 338-342 (2000), p.131.

[4] O. Kordina, C. Hallin, A. Henry, J.P. Bergman, I. Ivanov, A. Ellison, N.T. Son, and E. Janzén: Phys. Stat. Sol. (b) 202 (1997), p.321.

[5] J. Zhang, J. Mazzola, C. Hoff, Y. Koshka, and J. Casady: Mat. Sci. Forum 483-485 (2005), p.77.

[6] S.E. Saddow and A. Agarwal, Advances in Silicon Carbide Processing and Applications (Artech House, Inc., Norwood 2004).

[7] R. Rupp, A. Wiedenhofer, P. Friedrichs, D. Peters, R. Schörner and D. Stephani: Mat. Sci. Forum Vols. 264-268 (1998), p.89.

DOI: https://doi.org/10.4028/www.scientific.net/msf.264-268.89

[8] NovaSiC at www. novasic. com.

[9] A. Ellison, J. Zhang, A. Henry, and E. Janzén: J. Cryst. Growth 236 (2002), p.225.

[10] S. Nakazawa, T. Kimoto, K. Hashimoto, and H. Matsunami: J. Cryst. Growth 237-239 (2002), p.1213.