Highly Uniform SiC Epitaxy for MESFET Fabrication
This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wall reactor with gas foil rotation. Excellent uniformity of < 2% for thickness and < 10% for doping has been routinely obtained for both 3x2-in. and 1x3-in. growth. The highly uniform epitaxy is maintained for the growth of a large range of doping concentrations (less than 5x1015 to greater than 1.5x1019 cm-3) and thicknesses (0.25 – 60 μm). MESFET buffer/channel structure has been characterized with SIMS measurement showing sharp interface transition. Pinch-off voltages are extracted from CV measurements over a full 2-in. wafer.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
J. Zhang et al., "Highly Uniform SiC Epitaxy for MESFET Fabrication", Materials Science Forum, Vols. 527-529, pp. 195-198, 2006