Highly Uniform SiC Epitaxy for MESFET Fabrication


Article Preview

This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wall reactor with gas foil rotation. Excellent uniformity of < 2% for thickness and < 10% for doping has been routinely obtained for both 3x2-in. and 1x3-in. growth. The highly uniform epitaxy is maintained for the growth of a large range of doping concentrations (less than 5x1015 to greater than 1.5x1019 cm-3) and thicknesses (0.25 – 60 μm). MESFET buffer/channel structure has been characterized with SIMS measurement showing sharp interface transition. Pinch-off voltages are extracted from CV measurements over a full 2-in. wafer.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




J. Zhang et al., "Highly Uniform SiC Epitaxy for MESFET Fabrication", Materials Science Forum, Vols. 527-529, pp. 195-198, 2006

Online since:

October 2006




[1] E. Morvan, O. Noblanc, C. Dua and C. Brylinski: Materials Science Forum Vols. 353-356 (2001), p.669.

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.669

[2] U. Forsberg, Ph. D thesis: CVD Growth of Silicon Carbide for High Frequency Applications, Linköping University, Sweden (2001) Doping map (cm-3) Doping map (cm-3) Pinch-off voltage map (V) Pinch-off voltage map (V).