Highly Uniform SiC Epitaxy for MESFET Fabrication

Abstract:

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This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wall reactor with gas foil rotation. Excellent uniformity of < 2% for thickness and < 10% for doping has been routinely obtained for both 3x2-in. and 1x3-in. growth. The highly uniform epitaxy is maintained for the growth of a large range of doping concentrations (less than 5x1015 to greater than 1.5x1019 cm-3) and thicknesses (0.25 – 60 μm). MESFET buffer/channel structure has been characterized with SIMS measurement showing sharp interface transition. Pinch-off voltages are extracted from CV measurements over a full 2-in. wafer.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

195-198

DOI:

10.4028/www.scientific.net/MSF.527-529.195

Citation:

J. Zhang et al., "Highly Uniform SiC Epitaxy for MESFET Fabrication", Materials Science Forum, Vols. 527-529, pp. 195-198, 2006

Online since:

October 2006

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Price:

$35.00

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