Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization


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The influence of the epitaxial layer growth parameters on the electrical characteristics of Schottky diodes has been studied in detail. Several diodes were manufactured on different epitaxial layers grown with different Si/H2 ratio and hence with different growth rates. From the electrical characterization a maximum silicon dilution ratio can be fixed at 0.04 %. This limit fixes also a maximum growth rate that can be obtained in the epitaxial growth, with this process, at about 8 μm/h. Several epitaxial layers have been grown, using this dilution ratio, with different temperatures (1550÷1650 °C). At 1600 °C the best compromise between the direct and the reverse characteristics has been found. With this process the yield decreases from 90% for a Schottky diode area of 0.25 mm2 to 61% for the 2 mm2 diodes. Optimizing the deposition process to reduce the defects introduced by the epitaxial process, yield of the order of 80% can be reached on 1 mm2 diodes.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




F. La Via et al., "Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization", Materials Science Forum, Vols. 527-529, pp. 199-202, 2006

Online since:

October 2006




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DOI: https://doi.org/10.4028/www.scientific.net/msf.483-485.67

[2] Schottky diodes vs. the total macroscopic defects of the epitaxial layers.

100 200 300 400 500 600 700.

[10] [20] [30] [40] [50] [60] [70] [80] [90] 100 Total defects (cm -2) Yield (%).