High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources


Article Preview

The epitaxial growth of SiC by a hot-wall CVD system using monomethylsilane (CH3SiH3) as a precursor is described. In the case of CH3SiH3 source only, an undoped homoepitaxial layer showed an n-type conduction around 1016-1017cm-3 on the Si face. To improve the quality of epilayers, the simultaneous supply of CH3SiH3 and C3H8 was carried out. The pit density of grown layers was reduced from 105 to 103cm-2, and a donor concentration as low as 1.6×1014cm-3 was achieved. An attempt to increase of the growth rate was also investigated.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




T. Hatayama et al., "High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources", Materials Science Forum, Vols. 527-529, pp. 203-206, 2006

Online since:

October 2006




[1] I. Golecki, F. Reidinger, and J. Marti: Appl. Phys. Lett. Vol. 60 (1992), p.1703.

[2] J.K. Jeong, C.S. Hwang and H.J. Kim: J. Electrochem. Soc. Vol. 149 (2002), p. G526.

[3] J. Komiyama, Y. Abe, S. Suzuki, T. Kita, and H. Nakanishi: J. Cryst. Growth Vol. 275 (2005), p. e1001.

[4] H. Nakazawa and M. Suemitsu: Appl. Phys. Lett. Vol. 79 (2001), p.755.

[5] E.C. Sanchez and S.J. Sibener: J. Phys. Chem. B Vol. 106 (2002), p.8019.

[6] Y. Narita, T. Inubushi, K. Yasui and T. Akahane: Appl. Surf. Sci. Vols. 212-213 (2003), p.730.

[7] T. Kimoto and H. Matsunami: J. Appl. Phys. Vol. 78 (1995), p.3132.

[8] K. Danno, K. Hashimoto, H. Saitoh, T. Kimoto and H. Matsunami: Jpn. J. Appl. Phys. Vol. 43 (2004), p. L969.

[9] C. Guerra and J. Piqueras: J. Phys. Condens. Mater. Vol. 16 (2004), p. S217.

[10] T. Hatayama, H. Yano, Y. Uraoka and T. Fuyuki: 3rd Int. Conf. Mater. for Advan. Tech., Abst. Symp. K (2005), p.4.

[11] K. Kojima, T. Suzuki, S. Kuroda and J. Noshino and K. Arai: Jpn. J. Appl. Phys. Vol. 42 (2003), p. L637 (b) (a) 100µm 20µm Fig. 5. Surface morphology of grown layers with CH3SiH3 flow rate of 10sccm at 1600 o C. (a) Si face and (b) C face.