Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD

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4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We have investigated surface morphology and background doping concentration of the epi-layers on 4°off-axis substrates. Surface morphology grown on the (0001) Si-face showed strong step bunching under C-rich conditions. On the other hand, smooth surface morphology on the (000-1) C-face could be grown in the wide C/Si ratio range at 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions on 4°off-axis (000-1) C-face, leading to a lowest doping concentration of 4.4x1014 cm-3.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

219-222

Citation:

K. Wada et al., "Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD", Materials Science Forum, Vols. 527-529, pp. 219-222, 2006

Online since:

October 2006

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[10] [14] [10] [15] [10] [16] (0001) Si face at 80 Torr (000-1) C face at 80 Torr (000-1) C face at 35 Torr Background doping level (cm -3) C/Si ratio Fig. 6. C/Si ratio dependence of background doping level of epi-layers on 4° off-axis 4H-SiC{0001}.

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