Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD


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4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We have investigated surface morphology and background doping concentration of the epi-layers on 4°off-axis substrates. Surface morphology grown on the (0001) Si-face showed strong step bunching under C-rich conditions. On the other hand, smooth surface morphology on the (000-1) C-face could be grown in the wide C/Si ratio range at 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions on 4°off-axis (000-1) C-face, leading to a lowest doping concentration of 4.4x1014 cm-3.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




K. Wada et al., "Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD", Materials Science Forum, Vols. 527-529, pp. 219-222, 2006

Online since:

October 2006




[1] B. Thomas and C. Hecht: Mater. Sci. Forum Vols. 483-485 (2005), p.141.

[2] K. Fukuda, M. Kato, K. Kojima and J. Senzaki: Appl. Phys. Lett. Vol. 84 (2004), p. (2088).

[3] K. Danno, T. Kimoto and H. Matsunami: Mater. Sci. Forum Vols. 457-460 (2004), p.197.

[4] H. Tsuchida, I. Kamata, T. Miyanagi, T. Nakamura, K. Nakayama, R. Ishii and Y. Sugawara: Jpn. J. Appl. Phys. Vol.

[44] (2005), p. L806.

[5] T. Kimoto, S. Nakazawa, K. Hashimoto and H. Matsunami: Appl. Phys. Lett. Vol. 79 (2001), p.2761.

1 2 3 4.

[10] [14] [10] [15] [10] [16] (0001) Si face at 80 Torr (000-1) C face at 80 Torr (000-1) C face at 35 Torr Background doping level (cm -3) C/Si ratio Fig. 6. C/Si ratio dependence of background doping level of epi-layers on 4° off-axis 4H-SiC{0001}.