Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition


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We have investigated the morphology and doping characteristics of 4H-SiC epilayers grown on 13o-22o off-axis (0001) substrates by horizontal hot-wall CVD. Step bunching is not observed on 18o off-axis substrates as well as on other substrates with large off-angles. The rms roughness is a minimum (as small as 0.10 nm) on 18o off-axis (0001). Under C-rich condition (C/Si >1.0), the donor concentration increases by increasing the off-angle, when the off-angle is larger than 15o. This trend in doping characteristic is enhanced in CVD growth at 1450-1500oC. At a high temperature of 1600oC, however, the off-angle dependence of donor concentration is significantly reduced. Epitaxial growth on 4H-SiC(000-1) with large off-angles is also reported.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




H. Saitoh et al., "Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition", Materials Science Forum, Vols. 527-529, pp. 223-226, 2006

Online since:

October 2006