Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC

Abstract:

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Thick layers have been grown on (1120) and (1 1 00)6H-SiC substrates. The thicknesses are up to 90 #m obtained with growth rate of 180 #m/h. Even in such thick layers the surfaces are smooth and only disturbed by polishing scratches. The surfaces contain steps which facilitate reproduction of the substrate polytype.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

227-230

DOI:

10.4028/www.scientific.net/MSF.527-529.227

Citation:

M. Syväjärvi et al., "Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 227-230, 2006

Online since:

October 2006

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$38.00

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