Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
Thick layers have been grown on (1120) and (1 1 00)6H-SiC substrates. The thicknesses are up to 90 #m obtained with growth rate of 180 #m/h. Even in such thick layers the surfaces are smooth and only disturbed by polishing scratches. The surfaces contain steps which facilitate reproduction of the substrate polytype.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
M. Syväjärvi et al., "Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 227-230, 2006