Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy

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Propagation and nucleation of basal plane dislocations (BPDs) in 4H-SiC(000-1) and (0001) epitaxy were compared. Synchrotron reflection X-ray topography was performed before and after epitaxial growth to classify the BPDs into those propagated from the substrate into the epilayer and those nucleated in the epilayer. It was revealed that the propagation ratio of BPDs for the (000-1) epitaxy was significantly smaller than that for the (0001) epitaxy. Growing (000-1) epilayers at a high C/Si ratio of 1.2 achieves a further reduction in BPDs to only 3 cm-2 for those propagated from the substrate, and 16 cm-2 for those nucleated in the epilayer. A dramatic increase was also found in the nucleation of BPDs omitting the re-polishing and in-situ H2 etching procedure.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

231-234

Citation:

H. Tsuchida et al., "Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy", Materials Science Forum, Vols. 527-529, pp. 231-234, 2006

Online since:

October 2006

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$38.00

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