CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates

Abstract:

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Hot-wall chemical vapor deposition has been used to epitaxially grow SiC layers on porous n-type 4H-SiC substrates. The growth was carried out at different speeds on porous layers of two different thicknesses. The quality of the SiC films was evaluated by X-ray diffraction and photoluminescence techniques. Based on the measurements, both the growth speed and the thickness of the porous layer buried underneath the epilayers do not appear to influence the structural integrity of the films. The intensity of the near bandedge low temperature photoluminescence appears stronger by a factor of two in films grown on porous layers.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

255-258

DOI:

10.4028/www.scientific.net/MSF.527-529.255

Citation:

Y. Shishkin et al., "CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates", Materials Science Forum, Vols. 527-529, pp. 255-258, 2006

Online since:

October 2006

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Price:

$35.00

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