Reduction of Dislocations in the Bulk Growth of SiC Crystals

Abstract:

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Recent reports on the impact of elementary dislocations on device performance and reliability suggest not only micropipe defects but also dislocations should be reduced or eliminated perfectly. This paper presents bulk growth process for reduction of the dislocations, and quality of the crystals grown by the process. Etch pit density of the best crystals grown by the process was lower by three orders of magnitude than that of conventional crystals. Moreover, large diameter crystals (>2”) with low dislocation density were successfully grown by the process.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

3-8

DOI:

10.4028/www.scientific.net/MSF.527-529.3

Citation:

D. Nakamura "Reduction of Dislocations in the Bulk Growth of SiC Crystals ", Materials Science Forum, Vols. 527-529, pp. 3-8, 2006

Online since:

October 2006

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Price:

$35.00

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