Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor

Abstract:

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Selective epitaxial growth (SEG) of cubic silicon carbide (3C-SiC) was carried out on patterned Si (100) substrates using SiO2 as a mask. The growth was performed by atmospheric pressure chemical vapour deposition in a resistance-heated furnace using hexamethyldisilane (HMDS) as the source. It was observed that voids are the major defect in the case of heteroepitaxial growth of 3C-SiC on Si. Using selective epitaxial growth, the density of voids was reduced. Lateral epitaxial overgrowth (LEO) was achieved at selected areas where windows are arrays of stripes. The effect of temperature, window shape and size, precursor concentration, etc. on the SEG of SiC has been studied. After growth, films have been characterized by Nomarski optical microscopy, SEM, Raman spectroscopy and AFM. Faceted growth was observed along (111) planes inside smaller windows. Raman spectroscopy was used to identify defects and the presence of other polytypes.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

303-306

DOI:

10.4028/www.scientific.net/MSF.527-529.303

Citation:

A. Gupta and C. Jacob , "Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor", Materials Science Forum, Vols. 527-529, pp. 303-306, 2006

Online since:

October 2006

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$35.00

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