Growth of 3C-SiC on Si Molds for MEMS Applications


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A hetero-epitaxial 3C-SiC growth process in a low-pressure hot-wall CVD reactor has been developed on planar Si (100) substrates. The growth rate achieved for this process was about 10 μm/h. The process consists of silane/propane/hydrogen chemistry with HCl used as a growth additive to increase the growth rate. 3C-SiC has also been grown on 22, 52 and 123 +m deep etched MEMS structures formed by DRIE of (100) Si at a rate of about 8 +m/h. Secondary electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) were used to analyze the quality of the 3C-SiC films.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




M. Reyes et al., "Growth of 3C-SiC on Si Molds for MEMS Applications", Materials Science Forum, Vols. 527-529, pp. 307-310, 2006

Online since:

October 2006




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DOI: 10.1557/adv.2016.327

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