Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy

Abstract:

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Deep-ultraviolet (DUV) micro-Raman spectroscopy was applied to study the micro structures of surface defects in a 4H-SiC homoepitaxially grown film. From DUV Raman spectrum, inclusions of 3C-SiC was found in comet defects. The shape of 3C-structure in comets was investigated and it was found that 3C inclusions in comets can be classified into two types. In addition, spectrum broadening due to the coupling of nonfolded longitudinal optical phonon mode and the photo-excited carriers was also found. The formation mechanisms of 3C inclusion in comets were discussed.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

339-342

DOI:

10.4028/www.scientific.net/MSF.527-529.339

Citation:

T. Tomita et al., "Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy", Materials Science Forum, Vols. 527-529, pp. 339-342, 2006

Online since:

October 2006

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$35.00

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