Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals

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Visible and deep UV Raman measurements have been applied to investigate the structural and electrical properties of stacking disordered 3C-SiC crystals. It is found that free-carrier density shows the significant dependence on the density of stacking faults in 3C-SiC. The density of stacking faults has been estimated from the comparison between experimentally obtained Raman spectra and Raman intensity profiles simulated using one-dimensional lattice models considering the disorder in bond polarizability arrangement.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

343-346

Citation:

T. Mitani et al., "Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals", Materials Science Forum, Vols. 527-529, pp. 343-346, 2006

Online since:

October 2006

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$38.00

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