Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals
Visible and deep UV Raman measurements have been applied to investigate the structural and electrical properties of stacking disordered 3C-SiC crystals. It is found that free-carrier density shows the significant dependence on the density of stacking faults in 3C-SiC. The density of stacking faults has been estimated from the comparison between experimentally obtained Raman spectra and Raman intensity profiles simulated using one-dimensional lattice models considering the disorder in bond polarizability arrangement.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
T. Mitani et al., "Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals", Materials Science Forum, Vols. 527-529, pp. 343-346, 2006