Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC


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Bulk n+-4H-SiC wafers (n=1-2×1019 cm-3) containing annealing-induced stacking faults were examined by Raman scattering. The coupled plasmon-LO mode was observed to shift in a manner consistent with 1018 cm-3 doping in the 4H-SiC. Numerical simulations were performed using a self-consistent Poisson-Schrödinger solver and agree well with the experimental observations of carrier transfer from the 4H-SiC into the 3C-SiC stacking faults. The Raman data also shows that the 3C stacking faults induce a tensile strain on the surrounding 4H-SiC regions.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




O. J. Glembocki et al., "Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 347-350, 2006

Online since:

October 2006




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