Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds

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Growth of 4H-SiC bulk crystals on 4H-SiC {03-38} seeds was done. 4H-SiC {03-38} is obtained by inclining the c-plane toward <01-10> at a 54.7 degrees angle. Growth on the 4H-SiC {03-38} seed has the potential to achieve high quality crystals without micropipes and stacking faults. Micropipe-free c-plane 4H-SiC wafers were achieved by growth on the 4H-SiC {03-38} seed. A transmission X-ray topograph image of the micropipe free c-plane wafer revealed that there are no macroscopic defects with displacements.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

35-38

Citation:

T. Furusho et al., "Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds", Materials Science Forum, Vols. 527-529, pp. 35-38, 2006

Online since:

October 2006

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$38.00

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