Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes

Abstract:

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In this paper the electrical activity of stacking faults and that of their bounding partial dislocations in degraded PiN diodes has been investigated by the technique of electron beam induced current (EBIC). The recombination behavior of C- and Si-core dislocations is discussed. It is proposed that nonradiative recombination significantly exceeds radiative recombination on both the C- and Si-core partial dislocations. At the same time, predominantly radiative recombination takes place in the faulted planes that presumably act as quantum wells.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

367-370

DOI:

10.4028/www.scientific.net/MSF.527-529.367

Citation:

S.I. Maximenko et al., "Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes", Materials Science Forum, Vols. 527-529, pp. 367-370, 2006

Online since:

October 2006

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Price:

$35.00

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