Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method


Article Preview

4H-SiC pin diodes were fabricated on epitaxial layers grown by Sandwich Sublimation Method (SSM). I-V and photoemission measurements were conducted on these devices. These measurements show hot spots responsible for a soft breakdown and evidence triangular shape defects previously observed in 4H-SiC pin diodes made on CVD epitaxial layers. These results agree with the morphology studies which indicate that the SSM-grown layers have a higher number of structural defects than their counterparts.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




N. Camara et al., "Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method", Materials Science Forum, Vols. 527-529, pp. 391-394, 2006

Online since:

October 2006




[1] D. Nakamura, I. Gunjishima et al.: NATURE , Vol. 430 (2004), p.1009.

[2] E. Bogdanova, A. A. Volkova, A. E. Cherenkov, A. A. Lebedev, R. Kakanakov, L. A. Kolaklieva, G. A. Sarov, T. M. Cholakova, A. V. Kirillov, and L. P. Romanov : Semiconductors, Vol. 39, N6 (2005), p.730.

[3] S. Y. Davydov, A. Lebedev, and N. S. Savkina: Proc. V. Int. Seminar SiC and Rel. Mat., Velikii Novgorod, (2004), p.125.

[4] N. Camara and K. Zekentes: Solid-State Electronics 46 (2002), p. (1959).

[5] N. Camara, K. Zekentes, E. Bano, and A. Thuaire: Materials Science Forum Vols. 483-485 (2004), p.773.