Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method
4H-SiC pin diodes were fabricated on epitaxial layers grown by Sandwich Sublimation Method (SSM). I-V and photoemission measurements were conducted on these devices. These measurements show hot spots responsible for a soft breakdown and evidence triangular shape defects previously observed in 4H-SiC pin diodes made on CVD epitaxial layers. These results agree with the morphology studies which indicate that the SSM-grown layers have a higher number of structural defects than their counterparts.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
N. Camara et al., "Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method", Materials Science Forum, Vols. 527-529, pp. 391-394, 2006