Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method

Abstract:

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4H-SiC pin diodes were fabricated on epitaxial layers grown by Sandwich Sublimation Method (SSM). I-V and photoemission measurements were conducted on these devices. These measurements show hot spots responsible for a soft breakdown and evidence triangular shape defects previously observed in 4H-SiC pin diodes made on CVD epitaxial layers. These results agree with the morphology studies which indicate that the SSM-grown layers have a higher number of structural defects than their counterparts.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

391-394

DOI:

10.4028/www.scientific.net/MSF.527-529.391

Citation:

N. Camara et al., "Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method", Materials Science Forum, Vols. 527-529, pp. 391-394, 2006

Online since:

October 2006

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Price:

$35.00

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