Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal


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The detailed properties of the dislocations of SiC crystals were analyzed using ultrahigh-quality substrates manufactured by RAF (repeated a-face) growth method by means of bulk X-ray topography. From this analysis, we could reveal the detailed features of one type of basal plane dislocations and two types of threading dislocations. The basal plane dislocations were screw type with Burgers vector were parallel to <11-20> direction. One of the threading dislocations was mixed type close to screw dislocation parallel to the growth direction with Burgers vector of 1c+na (n=0, 1, 2, …). Another was the edge type parallel to the c-axis, which was lying between two basal plane dislocations. Moreover, these dislocations were found to be connecting with each other, constituting large network structures.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




S. Yamaguchi et al., "Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal", Materials Science Forum, Vols. 527-529, pp. 407-410, 2006

Online since:

October 2006




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DOI: 10.1038/nature02810

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