The detailed properties of the dislocations of SiC crystals were analyzed using ultrahigh-quality substrates manufactured by RAF (repeated a-face) growth method by means of bulk X-ray topography. From this analysis, we could reveal the detailed features of one type of basal plane dislocations and two types of threading dislocations. The basal plane dislocations were screw type with Burgers vector were parallel to <11-20> direction. One of the threading dislocations was mixed type close to screw dislocation parallel to the growth direction with Burgers vector of 1c+na (n=0, 1, 2, …). Another was the edge type parallel to the c-axis, which was lying between two basal plane dislocations. Moreover, these dislocations were found to be connecting with each other, constituting large network structures.